Compact spin qubits using the common gate structure of fin field-effect transistors

The sizes of commercial transistors are nanometer order, and there have already been many proposals spin qubits using conventional complementary metal–oxide–semiconductor transistors. However, most the previously proposed require wires to control a small number qubits. This causes significant “jungle wires” problem when integrated into chip. Herein, reduce complicated wiring, we theoretically consider embedded fin field-effect transistor (FinFET) devices such that share common gate electrode FinFET. interactions between occur via Ruderman–Kittel–Kasuya–Yosida interaction channel possibility quantum annealing machine is discussed in addition computers current proposals.